features center amplifying gate hermetic metal case with ceramic insulator international standard case to-209ae (to-118) compression bonded encapsulation for heavy duty operations such as severe thermal cycling typical applications dc motor controls controlled dc power supplies ac controllers case style to-209ae (to-118) 330a phase control thyristors stud version st330s series 1 bulletin i25156 rev. c 03/03 www.irf.com i t(av) 330 a @ t c 75 c i t(rms) 520 a i tsm @ 50hz 9000 a @ 60hz 9420 a i 2 t@ 50hz 405 ka 2 s @ 60hz 370 ka 2 s v drm /v rrm 400 to 2000 v t q typical 100 s t j - 40 to 125 c parameters st330s units major ratings and characteristics
st330s series 2 www.irf.com bulletin i25156 rev. c 03/03 electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 08 800 900 st330s 12 1200 1300 50 16 1600 1700 20 2000 2100 on-state conduction i t(av) max. average on-state current 330 a 180 conduction, half sine wave @ case temperature 75 c i t(rms) max. rms on-state current 520 a dc @ 75c case temperature i tsm max. peak, one-cycle 9000 t = 10ms no voltage non-repetitive surge current 9420 t = 8.3ms reapplied 7570 t = 10ms 100% v rrm 7920 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 405 t = 10ms no voltage initial t j = t j max. 370 t = 8.3ms reapplied 287 t = 10ms 100% v rrm 262 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 4050 ka 2 s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage v t(to)2 high level value of threshold voltage r t 1 low level value of on-state slope resistance r t 2 high level value of on-state slope resistance v tm max. on-state voltage 1.52 v i pk = 1000a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l max. (typical) latching current 1000 0.834 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.687 (16.7% x x i t(av) < i < x i t(av) ), t j = t j max. 0.636 (i > x i t(av) ),t j = t j max. parameter st330s units conditions 0.898 (i > x i t(av) ),t j = t j max. ka 2 s v m ? ma t j = 25c, anode supply 12v resistive load a
st330s series www.irf.com 3 bulletin i25156 rev. c 03/03 parameter st330s units conditions switching t q typical turn-off time 100 t d typical delay time 1.0 di/dt max. non-repetitive rate of rise gate drive 20v, 20 ? , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25c i tm = 550a, t j = t j max, di/dt = 40a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 ?, t p = 500s 1000 a/s s dv/dt maximum critical rate of rise of off-state voltage i rrm max. peak reverse and off-state i drm leakage current blocking 500 v/s t j = t j max. linear to 80% rated v drm parameter st330s units conditions 50 ma t j = t j max, rated v drm /v rrm applied p gm maximum peak gate power 10.0 t j = t j max, t p 5ms p g(av) maximum average gate power 2.0 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 3.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt dc gate current required t j = - 40c to trigger ma t j = 25c t j = 125c v gt dc gate voltage required t j = - 40c to trigger v t j = 25c t j = 125c i gd dc gate current not to trigger 10 ma parameter st330s units conditions 20 5.0 triggering v gd dc gate voltage not to trigger 0.25 v t j = t j max typ. max. 200 - 100 200 50 - 2.5 - 1.8 3.0 1.1 - max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied w vt j = t j max, t p 5ms
st330s series 4 www.irf.com bulletin i25156 rev. c 03/03 ordering information table 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - p = stud base 3/4"-16unf-2a threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast - on terminals (gate and auxiliary cathode leads) device code 5 1 2 3 4 st 33 0 s 16 p 0 7 6 t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case r thcs max. thermal resistance, case to heatsink t mounting torque, 10% 48.5 (425) wt approximate weight 535 g case style to - 209ae (to-118) see outline table parameter st330s units conditions 0.10 dc operation 0.03 mounting surface, smooth, flat and greased thermal and mechanical specification c k/w non lubricated threads nm (lbf-in) ? r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) 180 0.011 0.008 120 0.013 0.014 90 0.017 0.018 k/w t j = t j max. 60 0.025 0.026 30 0.041 0.041 conduction angle sinusoidal conduction rectangular conduction units conditions
st330s series www.irf.com 5 bulletin i25156 rev. c 03/03 fast-on terminals case style to-209ae (to-118) all dimensions in millimeters (inches) outline table red cathode red silicon rubber 10.5 (0.41) 245 (9.65) 10 (0.39) white gate 4.3 (0.17) dia. ceramic housing white shrink nom. 47 (1.85) max. 245 (9.65) 38 (1.50) max. dia. 22 (0.87) max. max. 21 (0.82) max . sw 45 2 flexible lead 4.5 (0.18) max. c.s. 50mm (0.078 s.i.) 255 (10.04) red shrink 2 2 ( 0 . 8 6 ) m i n . 49 (1.92) max. 3/4"16 unf-2a 27.5 (1.08) 9 . 5 ( 0 . 3 7 ) m i n . amp. 280000-1 ref-250 * for metric device: m24 x 1.5 - lenght 21 (0.83) max. contact factory fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 70 80 90 100 110 120 130 0 50 100 150 200 250 300 350 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduc tion angle st3 3 0 s se r i e s r (dc) = 0.10 k/ w thjc 60 70 80 90 100 110 120 130 0 100 200 300 400 500 600 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period st330s series r (dc) = 0.10 k/ w thjc
st330s series 6 www.irf.com bulletin i25156 rev. c 03/03 fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 3500 4000 4500 5000 5500 6000 6500 7000 7500 8000 110100 numb er of eq ua l amp litud e ha lf cyc le curre nt pulses (n) pe a k ha lf s ine wa ve on-sta te current (a) initia l t = 125c @ 60 hz 0.0083 s @ 50 hz 0.0100 s j st330s series at any rated load condition and with rated v applied following surge. rrm 3000 4000 5000 6000 7000 8000 9000 0.01 0.1 1 pulse train duration (s) versus pulse train duration. control peak half sine wave on-state current (a) init ia l t = 125c no volt a g e rea pp lied rated v reapplied rrm j st330s series maximum non repetitive surge current of conduction may not be maintained. fig. 3 - on-state power loss characteristics fig. 4 - on-state power loss characteristics 25 50 75 100 125 maximum allowable ambient temperature (c) 0 . 0 8 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 . 2 k / w r = 0 . 0 3 k / w - d e l t a r t h s a 0 . 1 2 k / w 0 40 80 120 160 200 240 280 320 360 400 440 480 0 50 100 150 200 250 300 350 180 120 90 60 30 rm s li m i t conduction angle maximum average on-state power loss (w) average on-state current (a) st330s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature (c) r = 0 .0 3 k/ w - d e l t a r t h s a 0 . 0 8 k / w 0 . 1 2 k / w 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 1 . 2 k / w 0 50 100 150 200 250 300 350 400 450 500 550 600 650 0 100 200 300 400 500 600 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) st330s series t = 125c j
st330s series www.irf.com 7 bulletin i25156 rev. c 03/03 fig. 8 - thermal impedance z thjc characteristic 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 sq u a r e w a v e pu l se d u r a t i o n ( s) thjc st3 3 0 s se r i e s steady state value r = 0.10 k/ w (dc operation) thjc transient thermal imped anc e z (k/ w) fig. 9 - gate characteristics 0.1 1 10 100 0.001 0.01 0.1 1 10 100 vgd igd (b) (a) tj = 2 5 c tj = 1 2 5 c tj=-40 c (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for <=30% ra ted d i/ d t : 10v, 10ohm s frequency limited by pg(av) rated di/ dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, t p = 0.66ms devic e: st330s series (4) fig. 7 - on-state voltage drop characteristics instantaneous on-state voltage (v) instantaneous on-state current (a) 100 1000 10000 01234567 tj = 25?c tj = 125?c st330s series
st330s series 8 www.irf.com bulletin i25156 rev. c 03/03 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 03/03 data and specifications subject to change without notice. this product has been designed and qualified for industrial level. qualification standards can be found on ir's web site.
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